Part Number | NTLJD3115PT1G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | KEMET Corporation |
Description | MOSFET 2P-CH 20V 2.3A 6-WDFN |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.3A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 531pF @ 10V |
Power - Max | 710mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Supplier Device Package | 6-WDFN (2x2) |
Image |
Hot Offer
NTLJD3115PT1G
KEMET Corporation
4904
5.87
WIDEY INTERNATIONAL LIMITED
NTLJD3115PT1G
KEMET ELECTRONICS CORPORATION
3277
1.28
Hongkong Shengshi Electronics Limited
NTLJD3115PT1G
KE
4062
2.4275
FINECHIPS ELECTRONICS (HK) CO.,LIMITED
NTLJD3115PT1G
KEM
5956
3.575
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
NTLJD3115PT1G
keme
1760
4.7225
Nosin (HK) Electronics Co.