Part Number | SPP06N80C3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | KEMET Corporation |
Description | MOSFET N-CH 800V 6A TO-220AB |
Series | CoolMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.9V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 785pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 83W (Tc) |
Rds On (Max) @ Id, Vgs | 900 mOhm @ 3.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO-220-3 |
Package / Case | TO-220-3 |
Image |
SPP06N80C3
KEMET ELECTRONICS CORPORATION
1987
0.39
Gallop Great Holdings (Hong Kong) Limited
SPP06N80C3
KE
4524
1.0375
Viassion Technology Co., Limited
SPP06N80C3
KEM
560
1.685
Bonase Electronics (HK) Co., Limited
SPP06N80C3
keme
3366
2.3325
HK FEILIDI ELECTRONIC CO., LIMITED
SPP06N80C3
KEMET Corporation
6732
2.98
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED